The book is meant for the introductory
study in the high energy implantation in GaAs. It contains the irradiation
experiment with 100 MeV, Au-197 implantation in GaAs at room temperature done
at Inter University Accelerator Centre, New Delhi, India. A brief introduction to Rapid Thermal
Annealing System used is given. Detailed experimental procedure of I-V
characteristics of implanted samples with ohmic contacts is also mentioned. The
results of annealing behavior of irradiated samples analyzed and presented
using I-V data.
Kishor Vasant Sukhatankar is working as an Associate Professor in Physics at
Gogate Jogalekar College, Ratnagiri, Maharashtra about three decades.
has completed his Ph.D. in Swift Heavy Ion Implantation in GaAs from University
of Mumbai and currently pursuing his research in Materials Science. He has
participated in number of International
and National Conferences in India and abroad also worked as principle
investigator in some major and minor research projects supported by University
Grants Commission, New Delhi and Indian National Centre For Ocean Information
Services(INCOIS), Government of India.
research work has been published in many National and International peer