One of the important techniques to study the
properties of semiconductor devices is to determine and interpret its
current-voltage (I-V) characteristics. Study of electrical behaviour of
ion implanted n and n+ GaAs
substrates has been done using PC based IV measurement system.
the electrical behaviour of swift heavy ion implanted GaAs, single crystal n
and n+ type GaAs substrates
were implanted at room temperature with 70 MeV 120Sn ions to various doses from a 15 UD 16-MV Tendom
Accelerator (Pellrtron) at Nuclear Science Center, New Delhi.
The n+ and n type type samples implanted were
annealed at different temperatures in a Rapid Thermal Annealing system.
Current-voltage (I-V) measurements carried out over a temperature range of
(173-373K). The effect of annealing on the electrical properties of these
samples has been studied in detail and the possible conduction mechanisms
responsible for the electrical transport have been discussed in this book.
Kishor Vasant Sukhatankar is working as an Associate Professor in Physics at
Gogate Jogalekar College, Ratnagiri, Maharashtra. His research areas are
semiconductor devices and material science. He has completed his Ph.D. from
University of Mumbai. He has participated and presented his work in number of
International and National Conferences in India and abroad also. He has worked
as principle investigator in major and minor research projects supported by
University Grants Commission, New Delhi and Indian National Centre For Ocean
Information Services(INCOIS), Government of India.
published his research work in the form of two national and one international